Factory Lead Time  

12 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

45A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

330W Tc

Turn Off Delay Time  

30 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Number of Elements  

1

Operating Temperature  

-40°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2008

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

48MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

330W

Case Connection  

DRAIN

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

48m Ω @ 26A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4560pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

31ns

Vgs (Max)  

±30V

Fall Time (Typ)  

21 ns

Continuous Drain Current (ID)  

45A

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

250V

Width  

9.65mm

Height  

4.572mm

Length  

10.668mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free